june.2010version1.3 m agnachipsemiconductorltd . 1 MDP7N60B/mdf7n60b nchannelmosfet600v absolutemaximumratings(ta=25 o c) characteristics symbol MDP7N60B mdf7n60b unit drainsourcevoltage v dss 600 v drainsourcevoltage@tjmax v dss @t jmax 660 v gatesourcevoltage v gss 30 v t c =25 o c 7.0 7.0* a continuousdraincurrent t c =100 o c i d 4.4 4.4* a pulseddraincurrent (1) i dm 28 28* a t c =25 o c 131 42 powerdissipation derateabove25 o c p d 1.05 0.33 w w/ o c repetitiveavalancheenergy (1) e ar 13.1 mj peakdioderecoverydv/dt (3) dv/dt 4.5 v/ns singlepulseavalancheenergy (4) e as 220 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c *idlimitedbymaximumjunctiontemperature thermalcharacteristics characteristics symbol MDP7N60B mdf7n60b unit thermalresistance,junctiontoambient (1) r ja 62.5 62.5 thermalresistance,junctiontocase (1) r jc 0.95 3.01 o c/w MDP7N60B/mdf7n60b nchannelmosfet600v,7.0a,1.15 ? generaldescription these nchannel mosfet are produced using advanced magnachips mosfet technology, which provides low o n state resistance, high switching performance and ex cellent quality. these devices are suitable device for smps, high sp eed switchingandgeneralpurposeapplications. features v ds =600v v ds =660v @t jmax i d =7.0a @v gs =10v r ds(on) 1.15 @v gs =10v applications powersupply pfc highcurrent,highspeedswitching d g s to220f mdfseries to220 mdpseries free datasheet http://
june.2010version1.3 m agnachipsemiconductorltd . 2 MDP7N60B/mdf7n60b nchannelmosfet600v orderinginformation partnumber temp.range package packing rohsstatus MDP7N60Bth 55~150 o c to220 tube halogenfree mdf7n60bth 55~150 o c to220f tube halogenfree electricalcharacteristics(ta=25 o c characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 600 gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 2.0 4.0 v draincutoffcurrent i dss v ds =600v,v gs =0v 1 a gateleakagecurrent i gss v gs =30v,v ds =0v 100 na drainsourceonresistance r ds(on) v gs =10v,i d =3.5a 1.0 1.15 forwardtransconductance g fs v ds =30v,i d =3.5a 7.5 s dynamiccharacteristics totalgatecharge q g 20.1 gatesourcecharge q gs 4.5 gatedraincharge q gd v ds =480v,i d =7.0a,v gs =10v (3) 7.9 nc inputcapacitance c iss 800 reversetransfercapacitance c rss 5 outputcapacitance c oss v ds =25v,v gs =0v,f=1.0mhz 90 pf turnondelaytime t d(on) 17 risetime t r 27 turnoffdelaytime t d(off) 64 falltime t f v gs =10v,v ds =300v,i d =7.0a, r g =25 (3) 33 ns drainsourcebodydiodecharacteristics maximumcontinuousdrainto sourcediodeforwardcurrent i s 7 a sourcedraindiodeforward voltage v sd i s =7.0a,v gs =0v 1.4 v bodydiodereverserecovery time t rr 345 ns bodydiodereverserecovery charge q rr i f =7.0a,dl/dt=100a/s (3) 3.2 c note: 1.pulsewidthisbasedonr jc &r ja andthemaximumallowedjunctiontemperatureof150 c. 2.pulsetest:pulsewidth 300us,dutycycle 2%,pulsewidthlimitedbyjunctiontemperaturet j(max) =150 c. 3. i sd 7.0a,di/dt 200a/us,v dd =50v,r g =25,startingt j =25 c 4.l=8.2mh, i as =7.0a, v dd =50v,r g =25,startingt j =25 c, free datasheet http://
june.2010version1.3 m agnachipsemiconductorltd . 3 MDP7N60B/mdf7n60b nchannelmosfet600v fig. 5 transfercharacteristics fig.1onregioncharacteristics fig. 2 on resistancevariationwith draincurrentandgatevoltage fig. 3 on resistance variationwith temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forward voltage variation with source current and temperature 50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250 ? bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] 2 4 6 8 0.1 1 10 55 25 150 *notes; 1.vds=30v i d (a) v gs [v] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 25 150 notes: 1.v gs =0v 2.250 spulsetest i dr reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1.v gs =10v 2.i d =3.5a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 0 5 10 15 20 25 0 2 4 6 8 10 12 14 notes 1.250 ? pulsetest 2.t c =25 v gs =5.0v =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v =15.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 0 3 6 9 12 15 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v gs =10.0v v gs =20v r ds(on) [ ] i d ,draincurrent[a] free datasheet http://
june.2010version1.3 m agnachipsemiconductorltd . 4 MDP7N60B/mdf7n60b nchannelmosfet600v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig. 9 maximumsafeoperatingarea MDP7N60B(to220) fig. 11 transientthermalresponsecurve MDP7N60B(to220) 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =0.95 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec] 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 120v 300v 480v note:i d =7.0a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] fig. 1 2 transientthermalresponsecurve mdf7n60b(to220f) 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 1s 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =3.01 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec] fig. 10 maximumsafeoperatingarea mdf7n60b(to220f) 1 10 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] free datasheet http://
june.2010version1.3 m agnachipsemiconductorltd . 5 MDP7N60B/mdf7n60b nchannelmosfet600v fig. 15 maximum drain current v s. case temperature fig .1 3 singlepulsemaximumpower dissipationMDP7N60B(to220) fig .1 4 singlepulsemaximumpower dissipationmdf7n60b(to220f) 1e5 1e4 1e3 0.01 0.1 1 10 0 3000 6000 9000 12000 15000 singlepulse r thjc =0.95 /w t c =25 power(w) pulsewidth(s) 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 i d ,draincurrent[a] t c ,casetemperature[ ] 1e5 1e4 1e3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 12000 14000 singlepulse r thjc =3.01 /w t c =25 power(w) pulsewidth(s) free datasheet http://
june.2010version1.3 m agnachipsemiconductorltd . 6 MDP7N60B/mdf7n60b nchannelmosfet600v physicaldimensions 3leads,to220 dimensionsareinmillimetersunlessotherwisespec ified free datasheet http://
june.2010version1.3 m agnachipsemiconductorltd . 7 MDP7N60B/mdf7n60b nchannelmosfet600v physicaldimensions 3leads,to220f dimensionsareinmillimetersunlessotherwisespec ified s y mbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q 1 3.10 3.50 r 3.00 3.55 free datasheet http://
june.2010version1.3 m agnachipsemiconductorltd . 8 MDP7N60B/mdf7n60b nchannelmosfet600v disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd. free datasheet http://
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